RECOMBINATION, GAIN AND BANDWIDTH CHARACTERISTICS OF 1. 3- mu M SEMICONDUCTOR LASER AMPLIFIERS.

被引：0
|
作者：
Wang, Jinwei [1 ]
Olesen, Henning [1 ]
Stubkjaer, Kristian E. [1 ]
机构：
[1] Technical Univ of Denmark, Lyngby, Den, Technical Univ of Denmark, Lyngby, Den
来源：
Journal of Lightwave Technology | 1987年 / LT-5卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
LASERS, SEMICONDUCTOR
引用
收藏
页码：184 / 189
相关论文
共 50 条
  • [41] FEASIBILITY EXPERIMENTS ON ANALOG VIDEO TRANSMISSION USING A SEMICONDUCTOR LASER DIODE - OVER 30 km TRANSMISSION AT 1. 3 mu m WAVELENGTH.
    Asantani, K.
    Sato, K.
    Ishio, H.
    1979, : 1 - 16
  • [42] OPTIMUM DESIGN OF ELECTRON BEAM SEMICONDUCTOR LINEAR LOW-PASS AMPLIFIERS .1. BANDWIDTH AND RISE TIME
    NORRIS, CB
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (04) : 447 - 455
  • [43] AMPLIFIED SPONTANEOUS EMISSION AND GAIN CHARACTERISTICS OF FABRY-PEROT AND TRAVELING WAVE TYPE SEMICONDUCTOR-LASER AMPLIFIERS
    THYLEN, L
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (08) : 1532 - 1537
  • [44] 1. 3 ″MU″ M COMPONENTS FOR OPTICAL COMMUNICATIONS/ COMPOSANTS A 1,3 ″MU″ M POUR TELECOMMUNICATIONS OPTIQUES.
    HALLAIS, JEAN
    BOISSY, MARIE CLAUDE
    1981, V 24 (N 1): : 17 - 39
  • [45] EXPERIMENTAL-STUDY OF AUGER RECOMBINATION, GAIN, AND TEMPERATURE SENSITIVITY OF 1.5-MU-M COMPRESSIVELY STRAINED SEMICONDUCTOR-LASERS
    ZOU, Y
    OSINSKI, JS
    GRODZINSKI, P
    DAPKUS, PD
    RIDEOUT, WC
    SHARFIN, WF
    SCHLAFER, J
    CRAWFORD, FD
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (06) : 1565 - 1575
  • [46] PASSIVE MODELOCKING OF 1,3 MU-M SEMICONDUCTOR-LASER AMPLIFIER IN LOOP MIRROR CONFIGURATION
    AMMANN, H
    HODEL, W
    WEBER, HP
    HOLTMANN, C
    MELCHIOR, H
    ELECTRONICS LETTERS, 1995, 31 (15) : 1257 - 1258
  • [47] Gain-switched 3-μm Er:Pr-codoped fiber laser
    Dickinson, B.C.
    Golding, P.S.
    Jackson, S.D.
    King, T.A.
    Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, 2000, : 77 - 78
  • [48] HIGH-POWER 1. 3- mu m InGaAsP P-SUBSTRATE BURIED CRESCENT LASERS.
    Sakakibara, Yasushi
    Higuchi, Hideyo
    Oomura, Etsuji
    Nakajima, Yasuo
    Yamamoto, Yousuke
    Goto, Katsuhiko
    Namizaki, Hirofumi
    Ikeda, Kenji
    Susaki, Wataru
    Journal of Lightwave Technology, 1985, LT-3 (05)
  • [49] Small-signal cross-gain modulation and crosstalk characteristics of quantum dot semiconductor optical amplifiers at 1.3 μm
    Kim, J.
    Laemmlin, M.
    Meuer, C.
    Liebich, S.
    Eisenstein, G.
    Kovsh, A. R.
    Mikhrin, S. S.
    Krestnikov, I. L.
    Bimberg, D.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2009, 246 (04): : 864 - 867
  • [50] DISTRIBUTED FEEDBACK LASER EMITTING AT 1. 3 mu M FOR HIGH-BIT-RATE SYSTEMS.
    Ishikawa, Hiroshi
    Yamakoshi, Shigenobu
    Isozumi, Shoji
    Fujitsu Scientific and Technical Journal, 1986, 22 (05): : 451 - 460
12345