Alloying effects in self-assembled InAs/InP dots

被引：0
|
作者：
Brault, J. [1 ]
Gendry, M. [1 ]
Grenet, G. [1 ]
Hollinger, G. [1 ]
Desieres, Y. [2 ]
Benyattou, T. [2 ]
机构：
[1] Laboratoire d'Electronique-leame, UMR CNRS 5512, Ecl. Ctrl. L., Cedex, France
[2] Lab. de Phys. de la Matiere-LPM, UMR CNRS 5511, INSA Lyon, B., Cedex, France
来源：
Journal of Crystal Growth | 1999年 / 201卷
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页码：1176 / 1179
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