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- [22] FOCUSED GA ION-BEAM ETCHING OF SI IN CHLORINE GAS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (10): : 2288 - 2291
- [23] CHARACTERISTICS OF GAS-ASSISTED FOCUSED ION-BEAM ETCHING JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (02): : 234 - 241
- [24] CHARACTERISTICS OF ION-BEAM ASSISTED ETCHING OF GAAS USING FOCUSED ION-BEAM - DEPENDENCE ON GAS-PRESSURE JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (06): : L400 - L402
- [26] RADICAL BEAM ION-BEAM ETCHING OF GAAS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 1885 - 1888
- [28] THE INJECTION OF INERT-GAS IONS INTO SOLIDS - THEIR TRAPPING AND ESCAPE RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 53 (3-4): : 143 - 173
- [29] MASKLESS ION-BEAM ASSISTED ETCHING OF SI USING CHLORINE GAS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (03): : L169 - L172