Mechanism of ion-beam etching of organic resists by inert-gas ions

被引:0
|
作者
Koval, Yu.I. [1 ]
Borzenko, T.B. [1 ]
Kudryashov, V.A. [1 ]
机构
[1] Russian Acad of Sciences, Chernogolovka, Russia
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:1265 / 1271
相关论文
共 50 条
  • [21] GAS-ASSISTED ETCHING WITH FOCUSED ION-BEAM TECHNOLOGY
    CASEY, JD
    DOYLE, AF
    LEE, RG
    STEWART, DK
    ZIMMERMANN, H
    MICROELECTRONIC ENGINEERING, 1994, 24 (1-4) : 43 - 50
  • [22] FOCUSED GA ION-BEAM ETCHING OF SI IN CHLORINE GAS
    KOMURO, M
    WATANABE, N
    HIROSHIMA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (10): : 2288 - 2291
  • [23] CHARACTERISTICS OF GAS-ASSISTED FOCUSED ION-BEAM ETCHING
    YOUNG, RJ
    CLEAVER, JRA
    AHMED, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (02): : 234 - 241
  • [24] CHARACTERISTICS OF ION-BEAM ASSISTED ETCHING OF GAAS USING FOCUSED ION-BEAM - DEPENDENCE ON GAS-PRESSURE
    OCHIAI, Y
    GAMO, K
    NAMBA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (06): : L400 - L402
  • [25] SILYLATION OF FOCUSED ION-BEAM EXPOSED RESISTS
    HARTNEY, MA
    SHAVER, DC
    SHEPARD, MI
    HUH, JS
    MEINGAILIS, J
    APPLIED PHYSICS LETTERS, 1991, 59 (04) : 485 - 487
  • [26] RADICAL BEAM ION-BEAM ETCHING OF GAAS
    SKIDMORE, JA
    COLDREN, LA
    HU, EL
    MERZ, JL
    ASAKAWA, K
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 1885 - 1888
  • [27] PROFILE CONTROL BY CHEMICALLY ASSISTED ION-BEAM AND REACTIVE ION-BEAM ETCHING
    CHINN, JD
    ADESIDA, I
    WOLF, ED
    APPLIED PHYSICS LETTERS, 1983, 43 (02) : 185 - 187
  • [28] THE INJECTION OF INERT-GAS IONS INTO SOLIDS - THEIR TRAPPING AND ESCAPE
    CARTER, G
    ARMOUR, DG
    DONNELLY, SE
    INGRAM, DC
    WEBB, RP
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 53 (3-4): : 143 - 173
  • [29] MASKLESS ION-BEAM ASSISTED ETCHING OF SI USING CHLORINE GAS
    OCHIAI, Y
    SHIHOYAMA, K
    MASUYAMA, A
    GAMO, K
    SHIOKAWA, T
    TOYODA, K
    NAMBA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (03): : L169 - L172
  • [30] INTRODUCTION TO REACTIVE ION-BEAM ETCHING
    DOWNEY, DF
    BOTTOMS, WR
    HANLEY, PR
    SOLID STATE TECHNOLOGY, 1981, 24 (02) : 121 - 127