MODEL FOR THE STAEBLER-WRONSKI EFFECT BASED ON CHARGED IMPURITIES.

被引：0
|
作者：
Ishii, Nobuhiko [1 ]
Kumeda, Minoru [1 ]
Shimizu, Tatsuo [1 ]
机构：
[1] Fukui Inst of Technology, Dep of, Electrical Engineering &, Electronic Engineering, Fukui, Jpn, Fukui Inst of Technology, Dep of Electrical Engineering & Electronic Engineering, Fukui, Jpn
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1985年 / 24卷 / 04期
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摘要：
SEMICONDUCTOR MATERIALS
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页码：244 / 246
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