MODEL FOR THE STAEBLER-WRONSKI EFFECT BASED ON CHARGED IMPURITIES.

被引：0

作者：

Ishii, Nobuhiko ^{[1
]}

Kumeda, Minoru ^{[1
]}

Shimizu, Tatsuo ^{[1
]}

机构：

[1] Fukui Inst of Technology, Dep of, Electrical Engineering &, Electronic Engineering, Fukui, Jpn, Fukui Inst of Technology, Dep of Electrical Engineering & Electronic Engineering, Fukui, Jpn

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 1985年 / 24卷 / 04期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

SEMICONDUCTOR MATERIALS

引用

页码：244 / 246

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