Detection and mapping of oxygen in silicon wafers by scanning infrared absorption

被引：0

|

作者：

Lab d'Optique et Spetrometrie Laser, Marseille, France ^{[1
]}

机构：

来源：

Int J Infrared Millim Waves | / 2卷 / 491-499期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

收藏

相关论文

共 50 条

[41] Far-infrared absorption by interstitial oxygen impurities in silicon crystals
Yamada-Kaneta, H
PHYSICAL REVIEW B, 1998, 58 (11): : 7002 - 7006
[42] VIBRATIONAL-MODES AND INFRARED-ABSORPTION OF INTERSTITIAL OXYGEN IN SILICON
CHEN, CS
SCHRODER, DK
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 42 (04): : 257 - 262
[43] INFRARED-ABSORPTION OF INTERSTITIAL OXYGEN IN SILICON AT LOW-TEMPERATURES
WAGNER, P
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 53 (01): : 20 - 25
[44] CALIBRATION OF INFRARED-ABSORPTION MEASUREMENTS OF INTERSTITIAL OXYGEN CONCENTRATION IN SILICON
BULLIS, WM
WATANABE, M
BAGHDADI, A
LI, YZ
SCACE, RI
SERIES, RW
STALLHOFER, P
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : C100 - C100
[45] Evaluation of the precipitate contribution to the infrared absorption in interstitial oxygen measurements in silicon
Sassella, A
Borghesi, A
Pivac, B
Porrini, M
APPLIED PHYSICS LETTERS, 2001, 79 (25) : 4106 - 4108
[46] EVIDENCE FOR INTERNAL ROTATION IN THE FINE STRUCTURE OF THE INFRARED ABSORPTION OF OXYGEN IN SILICON
HROSTOWSKI, HJ
ALDER, BJ
JOURNAL OF CHEMICAL PHYSICS, 1960, 33 (04): : 980 - 990
[47] INTERSTITIAL OXYGEN GETTERING IN CZOCHRALSKI SILICON WAFERS
ROZGONYI, GA
PEARCE, CW
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (08) : C307 - C307
[48] Scanning force microscopy studies on the influence of oxygen concentration on the surface features of implanted and annealed silicon wafers
Frank, S
Kessler, M
Lerch, W
Kreiser, U
Schmitz, B
PRECISION ENGINEERING, NANOTECHNOLOGY, VOL. 2, 1999, : 495 - 498
[49] TESTING FOR OXYGEN PRECIPITATION IN SILICON-WAFERS
不详
SOLID STATE TECHNOLOGY, 1987, 30 (03) : 85 - 89
[50] IMPROVEMENT IN DETECTION OF OXYGEN IN SILICON BY INFRA-RED ABSORPTION
PAJOT, B
SOLID-STATE ELECTRONICS, 1969, 12 (11) : 923 - &

← 1 2 3 4 5 →