Detection and mapping of oxygen in silicon wafers by scanning infrared absorption

被引：0
|
作者：
Lab d'Optique et Spetrometrie Laser, Marseille, France [1 ]
机构：
来源：
Int J Infrared Millim Waves | / 2卷 / 491-499期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] New infrared absorption bands related to interstitial oxygen in silicon
    J Appl Phys, 5 (2466):
  • [32] POLARIZATION EFFECT ON INFRARED-ABSORPTION OF OXYGEN PRECIPITATES IN SILICON
    BORGHESI, A
    PIVAC, B
    SASSELLA, A
    APPLIED PHYSICS LETTERS, 1992, 60 (07) : 871 - 873
  • [33] DETECTION OF OXYGEN CONCENTRATION IN SILICON WAFERS USING A TUNABLE DIODE-LASER
    LO, W
    MAJKOWSKI, RF
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (04) : 395 - 399
  • [34] MAPPING OF GAAS WAFERS BY QUANTITATIVE INFRARED MICROSCOPY
    DOBRILLA, P
    BLAKEMORE, JS
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) : 1442 - 1448
  • [35] Lifetime mapping of Si wafers by an infrared camera
    Bail, M
    Kentsch, J
    Brendel, R
    Schulz, M
    CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000, 2000, : 99 - 103
  • [36] Iron concentration mapping in monocrystalline silicon wafers
    Palais, O
    Simon, JJ
    Yakimov, E
    Martinuzzi, S
    CRYSTALLINE DEFECTS AND CONTAMINATION: THEIR IMPACT AND CONTROL IN DEVICE MANUFACTURING III - DECON 2001, 2001, 2001 (29): : 233 - 240
  • [37] Impurity concentration mapping in multicrystalline silicon wafers
    Martinuzzi, S
    Palais, O
    BEAM INJECTION ASSESSMENT OF MICROSTRUCTURES IN SEMICONDUCTORS, 2000, 2000, 78-79 : 3 - 10
  • [38] QUANTITATIVE INFRARED-SPECTROSCOPY OF INTERSTITIAL OXYGEN IN SILICON-WAFERS USING MULTIVARIATE CALIBRATION
    LINN, JH
    HANLEY, KL
    APPLIED SPECTROSCOPY, 1993, 47 (12) : 2102 - 2107
  • [39] Photoelastic characterization of Si wafers by scanning infrared polariscope
    Fukuzawa, M
    Yamada, M
    JOURNAL OF CRYSTAL GROWTH, 2001, 229 (01) : 22 - 25
  • [40] INFRARED ABSORPTION SPECTRA OF OXYGEN-DEFECT COMPLEXES IN IRRADIATED SILICON
    RAMDAS, AK
    RAO, MG
    PHYSICAL REVIEW, 1966, 142 (02): : 451 - &
12345