Sn INCORPORATION IN GaAs BY MOLECULAR BEAM EPITAXY.

被引：0
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作者：
Ito, Hiroshi [1 ]
Ishibashi, Tadao [1 ]
机构：
[1] NTT, Atsugi, Jpn, NTT, Atsugi, Jpn
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1987年 / 26卷 / 11期
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页码：1760 / 1762
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