Transient capacitance in metal-oxide-semiconductor structures with stacked gate dielectrics

被引：0
|
作者：
机构：
[1] Goto, Masakazu
[2] Higuchi, Keiichi
[3] Toril, Kazuyoshi
[4] 1,Hasunuma, Ryu
[5] 1,Yamabe, Kikuo
来源：
Goto, M. | 1600年 / Japan Society of Applied Physics卷 / 43期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
13
引用
下载
收藏
相关论文
共 50 条
  • [21] Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices
    Borga, Matteo
    Mukherjee, Kalparupa
    De Santi, Carlo
    Stoffels, Steve
    Geens, Karen
    You, Shuzhen
    Bakeroot, Benoit
    Decoutere, Stefaan
    Meneghesso, Gaudenzio
    Zanoni, Enrico
    Meneghini, Matteo
    APPLIED PHYSICS EXPRESS, 2020, 13 (02)
  • [22] Nanoscale and Device Level Gate Conduction Variability of High-k Dielectrics-Based Metal-Oxide-Semiconductor Structures
    Bayerl, Albin
    Lanza, Mario
    Porti, Marc
    Nafria, Montserrat
    Aymerich, Xavier
    Campabadal, F.
    Benstetter, Guenther
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2011, 11 (03) : 495 - 501
  • [23] Mitigation of Complementary Metal-Oxide-Semiconductor Variability with Metal Gate Metal-Oxide-Semiconductor Field-Effect Transistors
    Yang, Ji-Woon
    Park, Chang Seo
    Smith, Casey E.
    Adhikari, Hemant
    Huang, Jeff
    Heh, Dawei
    Majhi, Prashant
    Jammy, Raj
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (04)
  • [24] DYNAMIC VOLT-CAPACITANCE CHARACTERISTIC MEASUREMENT IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES.
    Samokhvalov, M.K.
    Novichkov, V.V.
    Sverdlova, A.M.
    Instruments and Experimental Techniques (English Translation of Pribory I Tekhnika Eksperimenta), 1977, 20 (2 pt 2): : 559 - 561
  • [25] SIMPLE PHYSICAL MODEL FOR SPACE-CHARGE CAPACITANCE OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES
    GROVE, AS
    SAH, CT
    SNOW, EH
    DEAL, BE
    JOURNAL OF APPLIED PHYSICS, 1964, 35 (08) : 2458 - &
  • [26] GaN metal-oxide-semiconductor structures using Ga-oxide dielectrics formed by photoelectrochemical oxidation
    Fu, DJ
    Kwon, YH
    Kang, TW
    Park, CJ
    Baek, KH
    Cho, HY
    Shin, DH
    Lee, CH
    Chung, KS
    APPLIED PHYSICS LETTERS, 2002, 80 (03) : 446 - 448
  • [27] Gate oxide reliabilities in MOS (metal-oxide-semiconductor) structures with Ti-polycide gates
    Kim, HS
    Ko, DH
    Bae, DL
    Lee, NI
    Kim, DW
    Kang, HK
    Lee, MY
    JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (04) : L21 - L25
  • [28] Gate oxide reliabilities in MOS (metal-oxide-semiconductor) structures with Ti-polycide gates
    H. S. Kim
    D. H. Ko
    D. L. Bae
    N. I. Lee
    D. W. Kim
    H. K. Kang
    M. Y. Lee
    Journal of Electronic Materials, 1998, 27 : L21 - L25
  • [29] A PURE METAL POLYCIDE METAL-OXIDE-SEMICONDUCTOR GATE TECHNOLOGY
    SAKIYAMA, K
    YAMAUCHI, Y
    MATSUDA, K
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (06): : 1685 - 1691
  • [30] Nitrogen dependence of band alignment and electrical properties of HfTiON gate dielectrics metal-oxide-semiconductor capacitor
    He, G.
    Sun, Z. Q.
    Liu, M.
    Zhang, L. D.
    APPLIED PHYSICS LETTERS, 2010, 97 (19)
12345