Comment on 'theoretical scanning tunneling microscopy images of the As vacancy on the GaAs(110) surface'

被引:0
|
作者
Harper, J.
Lengel, G.
Allen, R.E.
Weimer, M.
机构
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] Atomically precise impurity identification and modification on the manganese doped GaAs(110) surface with scanning tunneling microscopy
    Garleff, J. K.
    Celebi, C.
    Van Roy, W.
    Tang, J. -M.
    Flatte, M. E.
    Koenraad, P. M.
    PHYSICAL REVIEW B, 2008, 78 (07):
  • [42] Interpretation of GaAs(110) scanning tunneling microscopy image contrast by the symmetry of the surface Bloch wave functions
    Jäger, ND
    Weber, ER
    Salmeron, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (02): : 511 - 516
  • [43] Anomalous scanning tunneling microscopy images of GaAs(110) surfaces due to tip-induced band bending
    Aloni, S
    Haase, G
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06): : 2651 - 2652
  • [44] Electronic properties of the Ga vacancy in GaP(110) surfaces determined by scanning tunneling microscopy
    Ebert, P
    Urban, K
    PHYSICAL REVIEW B, 1998, 58 (03): : 1401 - 1404
  • [45] SCANNING-TUNNELING-MICROSCOPY OF THE GAAS (311)A SURFACE RECONSTRUCTION
    WASSERMEIER, M
    SUDIJONO, J
    JOHNSON, MD
    LEUNG, KT
    ORR, BG
    DAWERITZ, L
    PLOOG, K
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 425 - 430
  • [46] SURFACE RECONSTRUCTIONS OF GAAS(100) OBSERVED BY SCANNING TUNNELING MICROSCOPY
    BIEGELSEN, DK
    BRINGANS, RD
    NORTHRUP, JE
    SWARTZ, LE
    PHYSICAL REVIEW B, 1990, 41 (09): : 5701 - 5706
  • [47] SCANNING-TUNNELING-MICROSCOPY OF THE REACTION OF NH3 WITH GAAS(110)
    BROWN, G
    WEIMER, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (04): : 1679 - 1683
  • [48] OBSERVATION OF POINT-DEFECTS AND DISLOCATIONS ON GAAS (110) BY SCANNING TUNNELING MICROSCOPY
    COX, G
    EBERT, P
    URBAN, K
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1991, (117): : 347 - 351
  • [49] SCANNING TUNNELING MICROSCOPY STUDIES OF CLEAN AND OXYGEN COVERED GAAS(110) SURFACES
    FEENSTRA, RM
    STROSCIO, JA
    TERSOFF, J
    JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (04) : A3 - A3
  • [50] Observation of point defects and microfaceting on GaAs(110) surfaces by scanning tunneling microscopy
    Cox, G.
    Graf, K.H.
    Szynka, D.
    Poppe, U.
    Urban, K.
    Vacuum, 1990, 41 (1 -3 Pt1) : 591 - 595