CHARGE CARRIER LIFETIME MEASUREMENTS ON HIGH PURITY SILICON.

被引：0
|
作者：
Van Wijnen, P.J. [1 ]
Ten Kate, W.R.Th. [1 ]
机构：
[1] Delft Univ of Technology, Delft, Neth, Delft Univ of Technology, Delft, Neth
来源：
Nuclear instruments and methods in physics research | 1986年 / A253卷 / 03期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
12
引用
收藏
页码：351 / 359
相关论文
共 50 条
  • [31] Charge carrier lifetime recovery in γ-irradiated silicon under the action of ultrasound
    A. O. Podolian
    A. B. Nadtochiy
    O. A. Korotchenkov
    Technical Physics Letters, 2012, 38 : 405 - 408
  • [32] Charge carrier lifetime modification in silicon by high energy H+ or He+ ion implantation
    Khanh, NQ
    Tutto, P
    Buiu, O
    Jaroli, EN
    Biro, LP
    Manuaba, A
    Gyulai, J
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 : 388 - 392
  • [33] Charge carrier lifetime modification in silicon by high energy H+, He+ ion implantation
    Khanh, NQ
    Tutto, P
    Jaroli, EN
    Buiu, O
    Biro, LP
    Paszti, F
    Mohacsy, T
    Kovacsics, C
    Manuaba, A
    Gyulai, J
    MATERIALS SCIENCE APPLICATIONS OF ION BEAM TECHNIQUES, 1997, 248-2 : 101 - 106
  • [34] Ultrafast Carrier Dynamics of Silicon Nanowire Ensembles: The Impact of Geometrical Heterogeneity on Charge Carrier Lifetime
    Grumstrup, Erik M.
    Cating, Emma M.
    Gabriel, Michelle M.
    Pinion, Christopher W.
    Christesen, Joseph D.
    Kirschbrown, Justin R.
    Vallorz, Ernest L., III
    Cahoon, James F.
    Papanikolas, John M.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2014, 118 (16): : 8626 - 8633
  • [35] CARRIER LIFETIME FROM TRANSIENT PHOTOCONDUCTIVITY MEASUREMENTS ON MICROCRYSTALLINE SILICON FILMS
    KIESS, H
    AUGELLI, V
    MURRI, R
    THIN SOLID FILMS, 1986, 141 (02) : 193 - 199
  • [36] CARRIER LIFETIME MEASUREMENTS ON ELECTRON-IRRADIATED SILICON-CRYSTALS
    GRAFF, K
    PIEPER, H
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 30 (02): : 593 - 599
  • [37] Advanced defect and impurity diagnostics in silicon based on carrier lifetime measurements
    Warta, W
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (04): : 732 - 746
  • [38] Bulk lifetime determination in high purity silicon by contactless laser technique
    A. B FEDORTSOV
    D. G LETENKO
    Y. V CHURKIN
    L. M TSENTSIPER
    J VEDDE
    Journal of Materials Science: Materials in Electronics, 1997, 8 : 213 - 216
  • [39] Bulk lifetime determination in high purity silicon by contactless laser technique
    Fedortsov, AB
    Letenko, DG
    Churkin, YV
    Tsentsiper, LM
    Vedde, J
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1997, 8 (03) : 213 - 216
  • [40] TEMPERATURE-DEPENDENCE OF THE EXCITON LIFETIME IN HIGH-PURITY SILICON
    HAMMOND, RB
    SILVER, RN
    APPLIED PHYSICS LETTERS, 1980, 36 (01) : 68 - 71
12345