CHARGE CARRIER LIFETIME MEASUREMENTS ON HIGH PURITY SILICON.

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作者：
Van Wijnen, P.J. [1 ]
Ten Kate, W.R.Th. [1 ]
机构：
[1] Delft Univ of Technology, Delft, Neth, Delft Univ of Technology, Delft, Neth
来源：
Nuclear instruments and methods in physics research | 1986年 / A253卷 / 03期
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摘要：
12
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页码：351 / 359
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