Control of ion energy for low-damage plasma processing in RF discharge

被引:0
|
作者
Sato, Naoyuki [1 ]
Kobayashi, Hideki [1 ]
Tanabe, Toshio [1 ]
Ikehata, Takashi [1 ]
Mase, Hiroshi [1 ]
机构
[1] Ibaraki Univ, Hitachi, Japan
来源
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1995年 / 34卷 / 4 B期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:2158 / 2162
相关论文
共 50 条
  • [41] Efficient and low-damage nitrogen doping of graphene via plasma-based methods
    Lin, Yu-Pu
    Ksari, Younal
    Aubel, Dominique
    Hajjar-Garreau, Samar
    Borvon, Gael
    Spiegel, Yohann
    Roux, Laurent
    Simon, Laurent
    Themlin, Jean-Marc
    CARBON, 2016, 100 : 337 - 344
  • [42] ION AND ELECTRON-ENERGY ANALYSIS AT A SURFACE IN AN RF DISCHARGE
    INGRAM, SG
    BRAITHWAITE, NSJ
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1988, 21 (10) : 1496 - 1503
  • [43] Low-damage low-k etching with an environmentally friendly CF3I Plasma
    Soda, Eiichi
    Kondo, Seiichi
    Saito, Shuichi
    Ichihashi, Yoshinari
    Sato, Aiko
    Ohtake, Hiroto
    Samukawa, Seiji
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2008, 26 (04): : 875 - 880
  • [44] Damage-free hydrogenation of graphene via ion energy control in plasma
    Cha, Jong
    Choi, Harim
    Hong, Jongill
    APPLIED PHYSICS EXPRESS, 2022, 15 (01)
  • [45] Development and Evaluation of Low-Damage Maize Snapping Mechanism Based on Deformation Energy Conversion
    Zhang, Zhilong
    Geng, Aijun
    APPLIED SCIENCES-BASEL, 2021, 11 (24):
  • [46] DUAL EXCITATION REACTIVE ION ETCHER FOR LOW-ENERGY PLASMA PROCESSING
    GOTO, HH
    LOWE, HD
    OHMI, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (05): : 3048 - 3054
  • [47] Energy influx from an rf plasma to a substrate during plasma processing
    Kersten, H
    Stoffels, E
    Stoffels, WW
    Otte, M
    Csambal, C
    Deutsch, H
    Hippler, R
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (08) : 3637 - 3645
  • [48] Low-energy penning ionization gauge type ion source assisted by RF magnetron discharge
    Abolmasov, SN
    Bizyukov, AA
    Kawai, Y
    Kashaba, AY
    Maslov, VI
    Sereda, KN
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (08): : 5415 - 5418
  • [49] Damage recovery and low-damage etching of ITO in H2/CO plasma: Effects of hydrogen or oxygen
    Hirata, Akiko
    Fukasawa, Masanaga
    Kugimiya, Katsuhisa
    Karahashi, Kazuhiro
    Hamaguchi, Satoshi
    Nagaoka, Kojiro
    PLASMA PROCESSES AND POLYMERS, 2019, 16 (09)
  • [50] MONITORING AND CONTROL OF REAL POWER IN RF PLASMA PROCESSING
    ZAU, GCH
    BUTTERBAUGH, JW
    RUMMEL, P
    SAWIN, HH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (03) : 872 - 873