Metalorganic vapor phase epitaxy of InAs layers on GaAs substrates using low-temperature growth of InGaAs graded buffer layers

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机构：
[1] Takano, Yasushi
[2] Umezawa, Masayoshi
[3] Shirakata, Sho
[4] Fuke, Shunro
来源：
Takano, Y. (teytaka@ipc.shizuoka.ac.jp) | 1600年 / Japan Society of Applied Physics卷 / 43期
关键词：
Crystal defects - Dislocations (crystals) - Metallorganic vapor phase epitaxy - Photoluminescence - Semiconducting indium compounds - Spectroscopic analysis - Substrates - Surface roughness - Transmission electron microscopy - X ray diffraction analysis;
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摘要：
InAs layers were grown on GaAs substrates by metalorganic vapor phase epitaxy using InGaAs graded buffer layers and two-step growth. Layer quality was investigated by transmission electron microscopy. The threading dislocation density in InAs grown with the graded buffer layer was determined to be 1.6 × 107 cm-2. That value was one order of magnitude lower than that of InAs layers grown by two-step growth. Graded buffer layer growth is more effective for InAs layers on GaAs substrates with low threading dislocation density than two-step growth.
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