LOW-TEMPERATURE EPITAXY OF GAAS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：0

作者：

CHEN, WK ^{[1
]}

CHANG, CS ^{[1
]}

CHEN, WC ^{[1
]}

机构：

[1] CHIAO TUNG UNIV,INST ELECTROOPT,HSINCHU,TAIWAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 8A期

关键词：

LOW-TEMPERATURE EPITAXY; GAAS; MOCVD;

D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The low-temperature (LT) epitaxial growth of high quality GaAs films is achieved by using triethylgallium and tertiarybutylarsine as the precursors. Without any external work, the deposition can be conducted at a temperature as low as 350-degrees-C in a conventional metalorganic chemical vapor deposition system. The full width at half-maximum of 77 K photoluminescence and X-ray rocking curve for a sample grown at 425-degrees-C are 8.2 meV and 14 arcsec, respectively. Materials with good electrical properties were also obtained. A Schottky diode formed on the LT CaAs epilayer shows a barrier height of 0.83 eV, and a reverse saturation current of 1.1 X 10(-7) A/cm2, comparable to that of a normal GaAs Schottky diode.

引用

页码：L1052 / L1055

页数：4

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