LOW-TEMPERATURE GROWTH OF HIGH-RESISTIVITY GAAS BY PHOTOASSISTED METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：6

作者：

ROBERTS, JC ^{[1
]}

BOUTROS, KS ^{[1
]}

BEDAIR, SM ^{[1
]}

LOOK, DC ^{[1
]}

机构：

[1] WRIGHT STATE UNIV,RES CTR,DAYTON,OH 45435

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 18期

关键词：

D O I：

10.1063/1.111626

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the photoassisted low-temperature (LT) metalorganic chemical vapor deposition (MOCVD) of high resistivity GaAs. The undoped as-grown GaAs exhibits a resistivity of approximately 10(6) OMEGA cm, which is the highest reported for undoped material grown in the MOCVD environment. Photoassisted growth of doped and undoped device quality GaAs has been achieved at a substrate temperature of 400-degrees-C in a modified atmospheric pressure MOCVD reactor. By using silane as a dopant gas, the LT photoassisted doped films have high levels of doping and electron mobilities comparable to those achieved by MOCVD for growth temperatures, T(g)>600-degrees-C.

引用

页码：2397 / 2399

页数：3

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