HIGH-RESISTIVITY UNDOPED AL0.48IN0.52AS LAYERS GROWN BY LOW-TEMPERATURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：5
|
作者：
KIMURA, T
OCHI, S
FUJII, N
ISHIDA, T
SONODA, T
TAKAMIYA, S
MITSUI, S
机构：
[1] Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation, Itami, Hyogo, 664, 4-1, Mizuhara
来源：
JOURNAL OF CRYSTAL GROWTH | 1994年 / 145卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(94)91172-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The growth temperature dependence of the room temperature resistivity of undoped Al0.48In0.52As layers grown by metalorganic chemical vapor deposition (MOCVD) has been studied. For the first time we demonstrate that undoped AlInAs layers with a resistivity of over 2x10(8) Omega cm can be successfully grown by MOCVD at low temperature (500 degrees C). We propose that the increase of the resistivity of undoped AlInAs layers with decreasing growth temperature is attributed to the compensation of the residual deep and shallow donors by the increasing number of carbon accepters at lower growth temperature.
引用
收藏
页码：963 / 967
页数：5
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