Electrical and photoluminescence properties of iodine-doped ZnSe films grown by low-pressure MOVPE

被引：0
|
作者：
Yoshikawa, Akihiko [1 ]
Nomura, Hiroshi [1 ]
Yamaga, Shigeki [1 ]
Kasai, Haruo [1 ]
机构：
[1] Chiba Univ, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1988年 / 27卷 / 10期
关键词：
D O I：
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学科分类号：
摘要：
Semiconducting Films
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页码：1948 / 1951
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