EPITAXIAL-GROWTH AND PHOTOLUMINESCENCE CHARACTERIZATION OF ZNSE-NA FILMS BY LOW-PRESSURE MOCVD

We have for the time grown ZnSe layers with intentional Na acceptor inpurities on (100) GaAs and (110) ZnSe substrates at 300°C by the low-pressure metalorganic chemical-vapour-deposition (MOCVD) method. The intense Na acceptor bound-exciton emission line at about 2.793 eV at 4.2 K appears in the hetero- and homo-epitaxial films grown using a Na2Se source whose cell temperature was 300-560°C. Preliminary irradiation with Hg (UV) light was carried out to activate the incorporation of Na acceptors into ZnSe during growth. The Na acceptor bound-exciton and the related donor-acceptor pair band were enhanced in intensity by this photo-assisted MOCVD. © 1990.