Growth and properties of InAsP alloys prepared by organometallic vapor phase epitaxy

被引：0
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作者：
Huang, K.H. [1 ]
Wessels, B.W. [1 ]
机构：
[1] Northwestern Univ, United States
来源：
Journal of Crystal Growth | 1600年 / 92卷 / 3-4期
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摘要：
Semiconducting Indium Compounds
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页码：547 / 552
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