Growth and properties of InAsP alloys prepared by organometallic vapor phase epitaxy

被引：0

作者：

Huang, K.H. ^{[1
]}

Wessels, B.W. ^{[1
]}

机构：

[1] Northwestern Univ, United States

来源：

Journal of Crystal Growth | 1600年 / 92卷 / 3-4期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Semiconducting Indium Compounds

引用

页码：547 / 552

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