Transmission electron microscope observation of cubic GaN grown by metalorganic vapor phase epitaxy with dimethylhydrazine on (001) GaAs

被引：0
|
作者：
Kuwano, Noriyuki [1 ]
Nagatomo, Yoshiyuki [1 ]
Kobayashi, Kenki [1 ]
Oki, Kensuke [1 ]
Miyoshi, Seiro [1 ]
Yaguch, Hiroyuki [1 ]
Onabe, Kentaro [1 ]
Shiraki, Yasuhiro [1 ]
机构：
[1] Kyushu Univ, Fukuoka, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1994年 / 33卷 / 1 A期
关键词：
15;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：18 / 22
相关论文
共 50 条
  • [31] Metalorganic vapor phase epitaxy growth of high quality cubic GaN on GaAs (100) substrates
    Wu, J
    Yaguchi, H
    Onabe, K
    Shiraki, Y
    Ito, R
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (3B): : 1440 - 1442
  • [32] Selective-area growth and characterization of cubic GaN grown by metalorganic vapor phase epitaxy
    Suwanyangyaun, Pattana
    Sanorpim, Sakuntam
    Onabe, Kentaro
    THIN SOLID FILMS, 2020, 709 (709)
  • [33] The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition
    Sun, XL
    Wang, YY
    Yang, H
    Li, JB
    Zheng, LX
    Xu, DP
    Wang, ZG
    THIN SOLID FILMS, 2000, 368 (02) : 237 - 240
  • [34] AlGaN/GaN heterostructure grown by metalorganic vapor phase epitaxy
    Qu, JQ
    Li, J
    Zhang, GY
    SOLID STATE COMMUNICATIONS, 1998, 107 (09) : 467 - 470
  • [35] Indium doping to GaN grown on GaAs{114}B substrates by metalorganic vapor phase epitaxy
    Funato, M
    Shimogami, K
    Ujita, S
    Kawaguchi, Y
    Fujita, S
    Fujita, S
    INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, 2002, : 434 - 437
  • [36] Substrate misorientation dependence of the hexagonal phase inclusion in cubic GaN films grown by metalorganic vapor phase epitaxy
    Nagayama, A
    Katayama, R
    Nakadan, N
    Miwa, K
    Yaguchi, H
    Wu, J
    Onabe, K
    Shiraki, Y
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1999, 176 (01): : 513 - 517
  • [37] Atomic ordering in GaAsSb (001) grown by metalorganic vapor phase epitaxy
    Jiang, W. Y.
    Kavanagh, K. L.
    Watkins, S. P.
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (19) : 4391 - 4397
  • [38] TRANSMISSION ELECTRON-MICROSCOPY OF (001) CDTE ON (001) GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    PETRUZZELLO, J
    OLEGO, D
    GHANDHI, SK
    TASKAR, NR
    BHAT, I
    APPLIED PHYSICS LETTERS, 1987, 50 (20) : 1423 - 1425
  • [39] Characterization of InGaAs/GaAs(001) films grown by metalorganic vapor phase epitaxy using alternative sources
    B. K. Han
    L. Li
    M. J. Kappers
    R. F. Hicks
    H. Yoon
    M. S. Goorsky
    K. T. Higa
    Journal of Electronic Materials, 1998, 27 : 81 - 84
  • [40] Characterization of InGaAs/GaAs(001) films grown by metalorganic vapor phase epitaxy using alternative sources
    Han, BK
    Li, L
    Kappers, MJ
    Hicks, RF
    Yoon, H
    Goorsky, MS
    Higa, KT
    JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (02) : 81 - 84
12345