Accurate dual-gate HFET nonlinear model for millimeter-wave MMIC design

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作者：
Universite de Lille I, Villeneuve D'Ascq, France [1 ]
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来源：
Int J RF Microwave Comput Aided Eng | / 4卷 / 315-320期
关键词：
Computer simulation - Equivalent circuits - Gates (transistor) - Heterojunctions - Integrated circuit layout - Mixer circuits - Monolithic microwave integrated circuits - Semiconductor device models;
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摘要：
An accurate nonlinear model for dual-gate HFETs is presented in this paper. Because of complexity of the global equivalent circuit, the dual-gate transistor is modeled as two single-gate devices in cascode configuration. A good agreement between the measured and simulated performance is obtained, and its validity is proved as it was used for the design of an MMIC mixer at V-band.
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