Nonradiative carrier recombination centers of Cl-doped ZnSe epitaxial layers

被引：0
|
作者：
Yoshino, K. [1 ]
Mikami, H. [1 ]
Yoneta, M. [2 ]
Saito, H. [2 ]
Ohishi, M. [2 ]
Ikari, T. [1 ]
机构：
[1] Dept. of Elec. and Electron. Eng., Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192, Japan
[2] Department of Applied Physics, Okayama University of Science, 1-1 Ridai-cho, Okayama 700-0005, Japan
来源：
Physica Status Solidi (A) Applied Research | 2000年 / 180卷 / 01期
关键词：
Activation energy - Charge carriers - Chlorine - Crystal defects - Emission spectroscopy - Molecular beam epitaxy - Photoacoustic spectroscopy - Photoluminescence - Semiconducting zinc compounds - Semiconductor doping;
D O I：
10.1002/1521-396X(200007)180:13.0.CO;2-Q
中图分类号：
学科分类号：
摘要：
The photothermal and photoluminescence spectroscopy for nondoped and chlorine (Cl)-doped ZnSe epitaxial layers were carried out at liquid nitrogen and room temperatures. We found two kinds of nonradiative carrier recombination centers which are Cl-related defects with activation energies of about 30 and 120 meV for the first time.
引用
收藏
页码：201 / 205
相关论文
共 50 条
  • [41] Photoluminescence of Cl-doped ZnTe epitaxial layer grown by atmospheric pressure metalorganic vapor phase epitaxy
    Tanaka, T
    Hayashida, K
    Nishio, M
    Guo, QX
    Ogawa, H
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (03) : 1527 - 1530
  • [42] Raman scattering of longitudinal-optical-phonon-plasmon coupling in Cl-doped ZnSe under high pressure
    Lin, Y. C.
    Chiu, C. H.
    Fan, W. C.
    Chia, C. H.
    Yang, S. L.
    Chuu, D. S.
    Lee, M. C.
    Chen, W. K.
    Chang, W. H.
    Chou, W. C.
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (12)
  • [43] RECOMBINATION CENTERS IN CADMIUM-SULFIDE STRONGLY DOPED WITH CU AND CL
    KUKK, PL
    ERM, AY
    ALTOSAAR, ME
    MELLIKOV, EY
    MOIN, MD
    UKRAINSKII FIZICHESKII ZHURNAL, 1981, 26 (06): : 990 - 994
  • [44] Photoluminescence characterization of nonradiative recombination centers in MOVPE grown GaAs:N δ-doped superlattice structure
    Haque, Md Dulal
    Kamata, Norihiko
    Islam, A. Z. M. Touhidul
    Honda, Zentaro
    Yagi, Shuhei
    Yaguchi, Hiroyuki
    OPTICAL MATERIALS, 2019, 89 : 521 - 527
  • [45] Formation and optical properties of ZnSe self-assembled quantum dots in Cl-doped ZnSe thin films grown on GaAs (100) substrates
    Panin, G. N.
    Kim, H. J.
    Kim, S. Y.
    Jung, J. H.
    Kim, T. W.
    Jeon, H. C.
    Kang, T. W.
    Kim, M. D.
    ADVANCES IN NANOMATERIALS AND PROCESSING, PTS 1 AND 2, 2007, 124-126 : 567 - +
  • [46] P-TYPE ZNSE-N GROWN BY MOLECULAR-BEAM EPITAXY - EVIDENCE OF NONRADIATIVE RECOMBINATION CENTERS IN MODERATELY TO HEAVILY-DOPED MATERIAL
    CALHOUN, LC
    ROULEAU, CM
    JEON, MH
    PARK, RM
    JOURNAL OF CRYSTAL GROWTH, 1994, 138 (1-4) : 352 - 356
  • [47] Enhanced thermoelectric performance in Cl-doped BiSbSe3 with optimal carrier concentration and effective mass
    Sining Wang
    Lizhong Su
    Yuting Qiu
    Yu Xiao
    Li-Dong Zhao
    JournalofMaterialsScience&Technology, 2021, 70 (11) : 67 - 72
  • [48] STRUCTURAL-PROPERTIES OF NITROGEN-DOPED ZNSE EPITAXIAL LAYERS GROWN BY MBE
    PETRUZZELLO, J
    GAINES, J
    VANDERSLUIS, P
    OLEGO, D
    MARSHALL, T
    PONZONI, C
    JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (05) : 453 - 456
  • [49] LANGEVIN RECOMBINATION OF DRIFTING ELECTRONS AND HOLES IN STABILIZED A-SE (CL-DOPED A-SE-0.3-PERCENT-AS)
    HAUGEN, C
    KASAP, SO
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1995, 71 (01): : 91 - 96
  • [50] Experimental investigation on the effect of electron irradiation on the distribution of recombination centers in silicon epitaxial layers
    Univ di Napoli 'Federico II', Napoli, Italy
    Alta Freq Riv Elettron, 2 (54-56):
12345