Nonradiative carrier recombination centers of Cl-doped ZnSe epitaxial layers

被引：0
|
作者：
Yoshino, K. [1 ]
Mikami, H. [1 ]
Yoneta, M. [2 ]
Saito, H. [2 ]
Ohishi, M. [2 ]
Ikari, T. [1 ]
机构：
[1] Dept. of Elec. and Electron. Eng., Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192, Japan
[2] Department of Applied Physics, Okayama University of Science, 1-1 Ridai-cho, Okayama 700-0005, Japan
来源：
Physica Status Solidi (A) Applied Research | 2000年 / 180卷 / 01期
关键词：
Activation energy - Charge carriers - Chlorine - Crystal defects - Emission spectroscopy - Molecular beam epitaxy - Photoacoustic spectroscopy - Photoluminescence - Semiconducting zinc compounds - Semiconductor doping;
D O I：
10.1002/1521-396X(200007)180:13.0.CO;2-Q
中图分类号：
学科分类号：
摘要：
The photothermal and photoluminescence spectroscopy for nondoped and chlorine (Cl)-doped ZnSe epitaxial layers were carried out at liquid nitrogen and room temperatures. We found two kinds of nonradiative carrier recombination centers which are Cl-related defects with activation energies of about 30 and 120 meV for the first time.
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页码：201 / 205
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