FURTHER INVESTIGATION OF ELECTRON TRAPS INDUCED BY B + AND P + AND ION IMPLANTATION IN n-Si.

被引：0
|
作者：
Sun Jinglan [1 ]
Chen Jianxin [1 ]
Li Mingfu [1 ]
机构：
[1] Univ of Science & Technology of, China, China, Univ of Science & Technology of China, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1987年 / 8卷 / 05期
关键词：
D O I：
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中图分类号：
学科分类号：
摘要：
SEMICONDUCTING SILICON
引用
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页码：545 / 547
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