共 50 条
- [1] A model for electromigration failure distributions of contacts and vias in advanced IC technologies1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, 1998, : 234 - 237Oates, AS
- [2] Electromigration failure distribution of contacts and vias as a function of stress conditions in submicron IC metallizations1996 IEEE INTERNATIONAL RELIABILITY PHYSICS PROCEEDINGS, 34TH ANNUAL, 1996, : 164 - 171Oates, AS
- [3] An electromigration failure model of tungsten plug contacts/vias for realistic lifetime prediction1996 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS, 1996, : 192 - 193Kawasaki, HHu, CK
- [4] Monte-Carlo simulation of electromigration failure distributions of submicron contacts and vias: A new extrapolation methodology for reliability estimatePROCEEDINGS OF THE IEEE 2000 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2000, : 208 - 210Huang, JSOates, AS
- [5] Electromigration failure of contacts and vias in sub-micron integrated circuit metallizationsMicroelectron Reliab, 7-8 (925-953):AT&T Bell Lab, Orlando, United States
- [6] Electromigration failure of contacts and vias in sub-micron integrated circuit metallizationsMICROELECTRONICS AND RELIABILITY, 1996, 36 (7-8): : 925 - 953Oates, AS
- [7] Electromigration failure model: its application to W plug and Al-filled viasThin Solid Films, 1 (45-51):Motorola, Austin, United States
- [8] Electromigration failure model: its application to W plug and Al-filled viasTHIN SOLID FILMS, 1998, 320 (01) : 45 - 51Kawasaki, HGall, MJawarani, DHernandez, RCapasso, C
- [9] Analysis and modeling of critical current density effects on electromigration failure distributions of Cu dual-damascene vias2008 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 46TH ANNUAL, 2008, : 385 - 391Oates, A. S.Lin, M. H.
- [10] ELECTROMIGRATION FAILURE AT AL-SI CONTACTSJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (08) : C220 - &PROKOP, GSJOSEPH, RR