Effects of heat treatments in inert ambients on Si/SiO2 structures

被引：0
|
作者：
Revesz, A.G. [1 ]
Hughes, H.L. [2 ]
机构：
[1] Revesz Associates, 7910 Park Overlook Drive, Bethesda, MD 20817, United States
[2] Naval Research Laboratory, Washington, DC 20375, United States
来源：
Journal of Non-Crystalline Solids | 1999年 / 254卷
关键词：
Number:; -; Acronym:; NRL; Sponsor: U.S. Naval Research Laboratory;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：47 / 56
相关论文
共 50 条
  • [1] Effects of heat treatments in inert ambients on Si/SiO2 structures
    Revesz, AG
    Hughes, HL
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1999, 254 : 47 - 56
  • [2] Irradiation effects in ultrathin Si/SiO2 structures
    Cantin, JL
    von Bardeleben, HJ
    Autran, JL
    RADECS 97: FOURTH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, 1998, : 97 - 101
  • [3] Irradiation effects in ultrathin Si/SiO2 structures
    Universites Paris, Paris, France
    IEEE Trans Nucl Sci, 3 pt 3 (1407-1411):
  • [4] Irradiation effects in ultrathin Si/SiO2 structures
    Cantin, JL
    von Bardeleben, HJ
    Autran, JL
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1998, 45 (03) : 1407 - 1411
  • [5] Simulation of Radiation Effects in SiO2/Si Structures
    Komarov, F. F.
    Zayats, G. M.
    Komarov, A. F.
    Miskiewicz, S. A.
    Michailov, V. V.
    Komsta, H.
    ACTA PHYSICA POLONICA A, 2015, 128 (05) : 857 - 860
  • [6] Photoluminescence from SiO2/Si/SiO2 structures
    Photopoulos, P
    Nassiopoulou, AG
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (21) : 3641 - 3650
  • [7] SPUTTERING EFFECTS IN SI, SIO2 AND THE SI/SIO2 INTERFACE
    DOWNEY, SW
    EMERSON, AB
    SURFACE AND INTERFACE ANALYSIS, 1993, 20 (01) : 53 - 59
  • [8] SI/SIO2 INTERFACE STRUCTURES IN LASER-RECRYSTALLIZED SI ON SIO2
    OGURA, A
    AIZAKI, N
    APPLIED PHYSICS LETTERS, 1989, 55 (06) : 547 - 549
  • [9] Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structures
    McDonald, K
    Huang, MB
    Weller, RA
    Feldman, LC
    Williams, JR
    Stedile, FC
    Baumvol, IJR
    Radtke, C
    APPLIED PHYSICS LETTERS, 2000, 76 (05) : 568 - 570
  • [10] Comparison of nitrogen incorporation of SiO2/SiC and SiO2/Si structures
    McDonald, K.
    Huang, M.B.
    Weller, R.A.
    Feldman, L.C.
    Williams, J.R.
    Stedile, F.C.
    Baumvol, I.J.R.
    Radtke, C.
    Applied Physics Letters, 2000, 76 (05)
12345