Lateral-size control of trench-buried quantum wires using GaAs/AlAs superlattice layers

被引：0

作者：

Sogawa, Tetsuomi ^{[1
]}

Ando, Seigo ^{[1
]}

Kanbe, Hiroshi ^{[1
]}

机构：

[1] NTT Basic Research Lab, Kanagawa, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1995年 / 34卷 / 8 B期

关键词：

Electron beam lithography - Etching - Metallorganic chemical vapor deposition - Optical properties - Optical variables control - Photoluminescence - Scanning electron microscopy - Semiconducting aluminum compounds - Semiconducting gallium arsenide - Semiconductor device manufacture - Semiconductor superlattices - Substrates;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We demonstrated the lateral-size control of GaAs/AlAs trench-buried quantum wires (QWRs) in the region below 20 nm by using GaAs/AlAs superlattice layers (SLs). Scanning electron microscopy images and photoluminescence properties of the trench-buried QWRs revealed that the trench width can be controlled by varying the number of SLs and reduced to about 13 nm by growing 7 pairs of SLs. The GaAs wires in the trenches have a tendency to grow so as to maintain a constant cross-sectional area, which leads to reduction of the energetic broadening of the quantum sub-levels caused by pattern size fluctuation.

引用

页码：4405 / 4407

共 32 条

[1] LATERAL-SIZE CONTROL OF TRENCH-BURIED QUANTUM WIRES USING GAAS/ALAS SUPERLATTICE LAYERS
SOGAWA, T
ANDO, S
KANBE, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (8B): : 4405 - 4407
[2] PHOTOLUMINESCENCE PROPERTIES OF 13X13 NM GAAS QUANTUM WIRES BURIED IN TRENCH STRUCTURES REDUCED BY GROWING GAAS/ALAS SUPERLATTICE LAYERS
SOGAWA, T
ANDO, S
KANBE, H
APPLIED PHYSICS LETTERS, 1995, 67 (08) : 1087 - 1089
[3] Photoluminescence excitation spectra in GaAs/AlAs trench-buried quantum wires with 20 nm wide rectangular cross-sectional shapes
Sogawa, T
Ando, S
Ando, H
Kanabe, H
APPLIED PHYSICS LETTERS, 1996, 68 (03) : 364 - 366
[4] GaAs/AlAs trench-buried quantum wires (< 20 nm × 20 nm) fabricated by metalorganic chemical vapor deposition on nonplanar substrates
Sogawa, Tetsuomi
Ando, Seigo
Kanbe, Hiroshi
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1993, 32 (12 B): : 6224 - 6227
[5] GROWTH OF GAAS/ALAS TRENCH-BURIED MULTIPLE-QUANTUM WIRES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION ON V-GROOVED SUBSTRATES
SOGAWA, T
ANDO, S
KANBE, H
APPLIED PHYSICS LETTERS, 1994, 64 (24) : 3299 - 3301
[6] GAAS/ALAS TRENCH-BURIED QUANTUM WIRES WITH NEARLY RECTANGULAR CROSS-SECTIONS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION ON V-GROOVED SUBSTRATES
SOGAWA, T
ANDO, S
KANBE, H
APPLIED PHYSICS LETTERS, 1994, 64 (04) : 472 - 474
[7] GAAS/ALAS TRENCH-BURIED QUANTUM WIRES (LESS-THAN-20NMX20NM) FABRICATED BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION ON NONPLANAR SUBSTRATES
SOGAWA, T
ANDO, S
KANBE, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (12B): : 6224 - 6227
[8] LATERAL CONTROL OF IMPURITY-INDUCED DISORDERING OF ALAS/GAAS SUPERLATTICE
KAWABE, M
IKEDA, Y
OGAWA, K
SHIRAISHI, T
YOKOYAMA, S
NANICHI, Y
BANDO, Y
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4): : 441 - 444
[9] Localized intermixing of AlAs and GaAs layers for lithographic control of the lateral oxidation of AlAs
Massengale, AR
Tai, CY
Deal, MD
Plummer, JD
Harris, JS
1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 1998, : 329 - 332
[10] Localized intermixing of AlAs and GaAs layers for lithographic control of the lateral oxidation of AlAs
Massengale, AR
Tai, CY
Deal, MD
Plummer, JD
Harris, JS
COMPOUND SEMICONDUCTORS 1997, 1998, 156 : 329 - 332

← 1 2 3 4 →