GAAS/ALAS TRENCH-BURIED QUANTUM WIRES (LESS-THAN-20NMX20NM) FABRICATED BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION ON NONPLANAR SUBSTRATES

被引：1
|
作者：
SOGAWA, T
ANDO, S
KANBE, H
机构：
[1] NTT Basic Research Laboratories, Atsugi-shi
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 12B期
关键词：
TRENCH; QUANTUM WIRE; TRENCH-BURIED QUANTUM WIRE; NONPLANAR SUBSTRATE;
D O I：
10.1143/JJAP.32.6224
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the fabrication of quantum wires buried in U-grooved trenches grown by metalorganic chemical vapor deposition on V-grooved (001) substrates. These trench structures with vertical (110) sidewalls were formed as a result of the faceting of (110) planes, and lateral growth of these planes reduced the trench width to less than 20 nm. A cross-sectional scanning electron micrograph shows that these trench-buried structures have GaAs wires of about 20 nm lateral width. Photoluminescence (PL) blue shifts and strong PL anisotropy confirm two-dimensional quantum confinement.
引用
收藏
页码：6224 / 6227
页数：4
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