History dependence of output characteristics of silicon-on-insulator (SOI) MOSFET's

被引：0
|
作者：
T. J. Watson Research Cent, Yorktown Heights, United States [1 ]
机构：
来源：
IEEE Electron Device Lett | / 1卷 / 7-9期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] The pH response of a silicon-on-insulator MOSFET with an integrated nanofluidic cell
    Takulapalli, BR
    Thornton, TJ
    Gust, D
    Ashcroft, B
    Lindsay, SM
    Zhang, HQ
    Tao, NJ
    2003 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, 2003, : 114 - 116
  • [42] Thermal characterization of a double-gate silicon-on-insulator MOSFET
    Pandey, Manoj K.
    Sen, Sujata
    Gupta, R.S.
    Journal of Physics D: Applied Physics, 32 (03): : 344 - 349
  • [43] 0.18-mu m fully-depleted silicon-on-insulator MOSFET's
    Cao, M
    Kamins, T
    VandeVoorde, P
    Diaz, C
    Greene, W
    IEEE ELECTRON DEVICE LETTERS, 1997, 18 (06) : 251 - 253
  • [44] Study of the off-state leakage current in silicon-on-insulator (SOI) n-MOSFET for RF circuit design
    Soin, Norhayati
    Saad, Norazian Mat
    CURRENT ISSUES OF PHYSICS IN MALAYSIA, 2008, 1017 : 193 - 198
  • [45] A NEW 2-DIMENSIONAL SHORT-CHANNEL MODEL FOR THE DRAIN CURRENT-VOLTAGE CHARACTERISTICS OF A FULLY DEPLETED SOI (SILICON-ON-INSULATOR) MOSFET
    AGGARWAL, V
    GUPTA, RS
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1995, 79 (03) : 293 - 301
  • [46] THRESHOLD VOLTAGE OF THIN-FILM SILICON-ON-INSULATOR (SOI) MOSFETS
    LIM, HK
    FOSSUM, JG
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (10) : 1244 - 1251
  • [47] Characterization of trap states at silicon-on-insulator (SOI)/buried oxide (BOX) interface by back gate transconductance characteristics in SOI MOSFETs
    Nakajima, Y. (dl0200010@toyonet.toyo.ac.jp), 2004, Japan Society of Applied Physics (42):
  • [48] Characterization of trap states at silicon-on-insulator (SOI)/buried oxide (BOX) interface by back gate transconductance characteristics in SOI MOSFETs
    Nakajima, Y
    Tomita, H
    Aoto, K
    Ito, N
    Hanajiri, T
    Toyabe, T
    Morikawa, T
    Sugano, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (4B): : 2004 - 2008
  • [49] Large cross-section rib silicon-on-insulator (SOI) S-bend waveguide
    Zamhari, Nurdiani
    Ehsan, Abang Annuar
    OPTIK, 2017, 130 : 1414 - 1420
  • [50] Tunable, Dual-Gate, Silicon-on-Insulator (SOI) Nanoelectromechanical Resonators
    Yu, Lin
    Pajouhi, Hossein
    Nelis, Molly R.
    Rhoads, Jeffrey F.
    Mohammadi, Saeed
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2012, 11 (06) : 1093 - 1099
12345