Method to obtain low-dislocation-density regions by patterning with SiO2 on GaAs/Si followed by annealing

被引：0
|
作者：
机构：
[1] Yamaichi, Eiji
[2] Ueda, Takashi
[3] Gao, Qingzhu
[4] Yamagishi, Chouho
[5] Akiyama, Masahiro
来源：
Yamaichi, Eiji | 1600年 / JJAP, Minato-ku, Japan卷 / 33期
关键词：
7;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Interpretation of the Si Kα x-ray spectra accompanying the stopping of swift Ca ions in low-density SiO2 aerogel
    Rzadkiewicz, J.
    Gojska, A.
    Rosmej, O.
    Polasik, M.
    Slabkowska, K.
    PHYSICAL REVIEW A, 2010, 82 (01):
  • [42] EFFECTS OF TAILING OF DENSITY OF STATE ON THE MOBILITY OF SI-MOSFETS AT LOW-TEMPERATURES - A PROPOSAL FOR THE METHOD OF CHARACTERIZATION OF SI-SIO2 INTERFACES
    YAGI, A
    KAWAJI, S
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) : 909 - 915
  • [43] RECORD LOW SIO2/SI INTERFACE STATE DENSITY FOR LOW-TEMPERATURE OXIDES PREPARED BY DIRECT PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
    CHEN, Z
    YASUTAKE, K
    DOOLITTLE, A
    ROHATGI, A
    APPLIED PHYSICS LETTERS, 1993, 63 (15) : 2117 - 2119
  • [44] Effect of thermal annealing on microstructural properties of Ti/Ge2Sb2Te5/Ti thin films deposited on SiO2/Si substrates by a sputtering method
    Kim, S. Y.
    Lee, H. S.
    Chung, I. S.
    Park, Y. J.
    Lee, J. Y.
    Kim, T. W.
    APPLIED SURFACE SCIENCE, 2007, 253 (08) : 4041 - 4044
  • [45] REDUCTION OF THE DISLOCATION DENSITY FOR GAAS THIN-FILMS ON SI SUBSTRATES GROWN BY MOLECULAR-BEAM EPITAXY USING THE 2-STEP GROWTH METHOD
    WOO, YD
    LEE, HI
    KANG, TW
    KIM, TW
    WANG, KL
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1995, 14 (19) : 1340 - 1343
  • [46] Rapid Microwave Annealing of Amorphous Lead Zirconate Titanate Thin Films Deposited by Sol-Gel Method on LaNiO3/SiO2/Si Substrates
    Chen, Y. N.
    Wang, Z. J.
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2013, 96 (01) : 90 - 95
  • [47] Copper distribution behavior near a SiO2/Si interface by low-temperature (< 400°C) annealing and its influence on electrical characteristics of MOS-capacitors
    Hozawa, K
    Itoga, T
    Isomae, S
    Yugami, J
    Ohkura, M
    2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2000, : 24 - 25
  • [48] SIMPLE METHOD TO DETERMINE THE SI/SIO2 FAST INTERFACE TRAP DENSITY CHANGE AFTER HIGH-FIELD STRESS ON SILICON-ON-INSULATOR SUBSTRATES
    CALLIGARO, RB
    IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1987, 134 (05): : 156 - 158
  • [49] Sub-100-nA-Operating Si-Compatible Ni/Ti/HfO2/SiO2/Si RRAM Device for High-Density Integration and Low-Power Applications
    Kim, Sungjun
    Cho, Seongjae
    Park, Byung-Gook
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 16 (10) : 10247 - 10251
  • [50] Low temperature fabrication of 5-10 nm SiO2/Si structure using advanced nitric acid oxidation of silicon (NAOS) method
    Fukaya, Yousuke
    Yanase, Takashi
    Kubota, Yasushi
    Imai, Shigeki
    Matsumoto, Taketoshi
    Kobayashi, Hikaru
    APPLIED SURFACE SCIENCE, 2010, 256 (18) : 5610 - 5613
12345