Method to obtain low-dislocation-density regions by patterning with SiO2 on GaAs/Si followed by annealing

被引：0
|
作者：
机构：
[1] Yamaichi, Eiji
[2] Ueda, Takashi
[3] Gao, Qingzhu
[4] Yamagishi, Chouho
[5] Akiyama, Masahiro
来源：
Yamaichi, Eiji | 1600年 / JJAP, Minato-ku, Japan卷 / 33期
关键词：
7;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Effect of annealing temperature on properties of SiO2/Si3N4 optical films prepared by PECVD method
    Wu Li-yu
    Li Xiao-qiang
    Wang Bin
    Qu Sheng-guan
    CAILIAO GONGCHENG-JOURNAL OF MATERIALS ENGINEERING, 2020, 48 (12): : 75 - 81
  • [32] Formation of SiO2/Si structure with low interface state density by atmospheric-pressure VHF plasma oxidation
    Zhuo, Zeteng
    Sannomiya, Yuta
    Goto, Kazuma
    Yamada, Takahiro
    Ohmi, Hiromasa
    Kakiuchi, Hiroaki
    Yasutake, Kiyoshi
    CURRENT APPLIED PHYSICS, 2012, 12 : S57 - S62
  • [33] Unexpected features of the formation of Si and Ge nanocrystals during annealing of implanted SiO2 layers: Low frequency Raman spectroscopic characterization
    Mankad, Venu
    Ovsyuk, N. N.
    Gupta, Sanjeev K.
    Jha, Prafulla K.
    PHYSICA B-CONDENSED MATTER, 2014, 432 : 116 - 120
  • [34] Low temperature preparation of the SiO2 films with low interface trap density using ECR diffusion and ECR CVD method
    Jeon, BJ
    Jung, IH
    Oh, IH
    Lim, TH
    Kang, MS
    1996 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS, 1996, : 259 - 262
  • [35] Density of defect states in low-k porous SiO2:F film researched by SCLC method
    Gou Jie
    He Zhi-Wei
    Pan Guo-Hui
    Wang Yin-Yue
    ACTA PHYSICA SINICA, 2006, 55 (06) : 2936 - 2940
  • [36] Enzyme-free glucose biosensor based on low density CNT forest grown directly on a Si/SiO2 substrate
    Zhu, Z. G.
    Garcia-Gancedo, L.
    Chen, C.
    Zhu, X. R.
    Xie, H. Q.
    Flewitt, A. J.
    Milne, W. I.
    SENSORS AND ACTUATORS B-CHEMICAL, 2013, 178 : 586 - 592
  • [37] Patterning of fluorine-, hydrogen-, and carbon-containing SiO2-like low dielectric constant materials in high-density fluorocarbon plasmas:: Comparison with SiO2
    Standaert, TEFM
    Matsuo, PJ
    Allen, SD
    Oehrlein, GS
    Dalton, TJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (03): : 741 - 748
  • [38] Shift in room-temperature photoluminescence of low-fluence Si+-implanted SiO2 films subjected to rapid thermal annealing
    Fu, Ming-Yue
    Tsai, Jen-Hwan
    Yang, Cheng-Fu
    Liao, Chih-Hsiung
    SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2008, 9 (04)
  • [39] Effect of annealing on the properties of low-k nanoporous SiO2 films prepared by sol-gel method with catalyst HF
    He, Z. W.
    Liu, X. Q.
    Xu, D. Y.
    Wang, Y. Y.
    MICROELECTRONICS RELIABILITY, 2006, 46 (12) : 2062 - 2066
  • [40] On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO2/Si fabricated by ECR-CVD
    Dueñas, S
    Castán, H
    García, H
    Barbolla, J
    San Andrés, E
    Mártil, I
    González-Díaz, G
    MICROELECTRONICS RELIABILITY, 2005, 45 (5-6) : 978 - 981
12345