Method to obtain low-dislocation-density regions by patterning with SiO2 on GaAs/Si followed by annealing

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[1] Yamaichi, Eiji
[2] Ueda, Takashi
[3] Gao, Qingzhu
[4] Yamagishi, Chouho
[5] Akiyama, Masahiro
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Yamaichi, Eiji | 1600年 / JJAP, Minato-ku, Japan卷 / 33期
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