STRUCTURAL FEATURES OF ALLOYED CONTACTS TO GaAs.

被引：0
|
作者：
Basterfield, James
Josh, Michael J.
Burgess, Michael R.
机构：
来源：
Acta Electronica | 1972年 / 15卷 / 01期
关键词：
ELECTRIC CONTACTS - SEMICONDUCTOR DEVICES; GUNN-EFFECT - SEMICONDUCTOR DEVICES-Contacts;
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摘要：
The contact technology has a great influence on successful manufacture of GaAs Gunn devices. The present paper describes one aspect of the metallurgical structure of the GaAs-metal interface after alloying. The most significant aspect of the results presented is the appearance of a metal-GaAs-metal interface which is not planar but punctuated on the GaAs side by a series of small holes bounded by (111) facets. The topography of the interface is dependent on the alloying cycle and the nature of the contact metal.
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页码：83 / 87
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