STRUCTURAL FEATURES OF ALLOYED CONTACTS TO GaAs.

被引：0

作者：

Basterfield, James

Josh, Michael J.

Burgess, Michael R.

机构：

来源：

Acta Electronica | 1972年 / 15卷 / 01期

关键词：

ELECTRIC CONTACTS - SEMICONDUCTOR DEVICES; GUNN-EFFECT - SEMICONDUCTOR DEVICES-Contacts;

D O I：

暂无

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学科分类号：

摘要：

The contact technology has a great influence on successful manufacture of GaAs Gunn devices. The present paper describes one aspect of the metallurgical structure of the GaAs-metal interface after alloying. The most significant aspect of the results presented is the appearance of a metal-GaAs-metal interface which is not planar but punctuated on the GaAs side by a series of small holes bounded by (111) facets. The topography of the interface is dependent on the alloying cycle and the nature of the contact metal.

引用

页码：83 / 87

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