STRUCTURAL FEATURES OF ALLOYED CONTACTS TO GaAs.

被引：0
|
作者：
Basterfield, James
Josh, Michael J.
Burgess, Michael R.
机构：
来源：
Acta Electronica | 1972年 / 15卷 / 01期
关键词：
ELECTRIC CONTACTS - SEMICONDUCTOR DEVICES; GUNN-EFFECT - SEMICONDUCTOR DEVICES-Contacts;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The contact technology has a great influence on successful manufacture of GaAs Gunn devices. The present paper describes one aspect of the metallurgical structure of the GaAs-metal interface after alloying. The most significant aspect of the results presented is the appearance of a metal-GaAs-metal interface which is not planar but punctuated on the GaAs side by a series of small holes bounded by (111) facets. The topography of the interface is dependent on the alloying cycle and the nature of the contact metal.
引用
收藏
页码：83 / 87
相关论文
共 50 条
  • [1] SEM ALLOYED Au-Ge-Ni OHMIC CONTACTS TO GaAs.
    Nassibian, A.G.
    Kalkur, T.S.
    Applications of surface science, 1984, 22-23 : 1019 - 1026
  • [2] NON-ALLOYED AND ALLOYED CONTACTS TO GAAS
    STALL, R
    EASTMAN, FL
    WOODARD, D
    WOOD, CEC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C392 - C392
  • [3] ALLOYED OHMIC CONTACTS TO GAAS
    BRASLAU, N
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 803 - 807
  • [4] HOT-PLATE ALLOYING FOR OHMIC CONTACTS TO GaAs.
    Henry, H.George
    Dawson, Dale E.
    Lemnios, Zachary J.
    Kim, Hebong
    IEEE Transactions on Electron Devices, 1984, ED-31 (08) : 1100 - 1103
  • [5] STRUCTURAL-ANALYSIS OF RAPID THERMALLY ALLOYED OHMIC CONTACTS TO P-GAAS
    LU, YC
    KALKUR, TS
    ARAUJO, C
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (04) : C196 - C196
  • [6] Al-Ge OHMIC CONTACTS TO N-TYPE GAAS.
    Zuleeg, Rainer
    Friebertshauser, Paul E.
    Stephens, J.M.
    Watanabe, S.H.
    Electron device letters, 1986, EDL-7 (11): : 603 - 604
  • [7] CONCENTRATION PROFILES AND ELECTRICAL PROPERTIES OF TANTALUM AND TITANIUM SILICIDES CONTACTS ON GaAs.
    Clement, M.
    Sanz, J.M.
    Martinez-Duart, J.M.
    Vide, les Couches Minces, 1987, 42 (236): : 159 - 161
  • [8] Mechanism of current flow in alloyed ohmic In/GaAs contacts
    T. V. Blank
    Yu. A. Gol’dberg
    O. V. Konstantinov
    V. G. Nikitin
    E. A. Posse
    Technical Physics, 2007, 52 : 285 - 287
  • [9] Mechanism of current flow in alloyed ohmic In/GaAs contacts
    Blank, T. V.
    Gol'dberg, Yu. A.
    Konstantinov, O. V.
    Nikitin, V. G.
    Posse, E. A.
    TECHNICAL PHYSICS, 2007, 52 (02) : 285 - 287
  • [10] SHALLOW IMPLANTS INTO GaAs.
    Graf, Volker
    Heuberger, Willi
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1986, B19-20 : 388 - 391
12345