InP technology drives millimeter-wave HEMT amplifiers

被引：0
|
作者：
De Raedt, Walter [1 ]
机构：
[1] IMEC, Leuven, Belgium
来源：
Microwaves and RF | 1995年 / 34卷 / 14期
关键词：
Current voltage characteristics - Frequencies - High electron mobility transistors - Microwave measurement - Millimeter wave devices - Monolithic microwave integrated circuits - Passivation - Performance - Semiconducting indium phosphide - Semiconductor device manufacture - Semiconductor device models - Semiconductor device structures;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Monolithically-integrated high-electron-mobility transistors (HEMTs) exhibit high operating efficiency, high reliability, compact size, and low weight, the attributes making HEMTs the active devices of choice in a number of millimeter-wave applications. In fact, device measurements recently completed show that pseudomorphic indium-phosphide (InP)-based HEMTs provide broadband amplification at frequencies well into the W-band range.
引用
收藏
相关论文
共 50 条
  • [31] MILLIMETER-WAVE TECHNOLOGY
    WILTSE, JC
    MICROWAVES & RF, 1988, 27 (05) : 92 - 92
  • [32] MILLIMETER-WAVE INP GUNN DEVICES
    CROWLEY, JD
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1983, 423 : 30 - 34
  • [33] Characteristics of broadband InP HFET millimeter-wave amplifiers and their applications in radio astronomy receivers
    Pospieszalski, MW
    Wollack, EJ
    1997 TOPICAL SYMPOSIUM ON MILLIMETER WAVES - PROCEEDINGS, 1998, : 143 - 146
  • [34] InP-based HBT technology for millimeter-wave MMIC VCOs
    Cowles, J
    Tran, L
    Wang, H
    Lin, E
    Block, T
    Streit, D
    Oki, A
    IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, : 199 - 202
  • [35] ADVANCED III-V HEMT TECHNOLOGY FOR MICROWAVE AND MILLIMETER-WAVE APPLICATIONS
    LONG, AP
    EDDISON, IG
    MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) : 389 - 396
  • [36] Low noise amplifiers in InP technology for pseudo correlating millimeter wave radiometer
    Kangaslahti, P
    Gaier, T
    Dawson, D
    Tuovinen, J
    Karttaavi, T
    Lahdes, M
    Hughes, NJ
    Cong, TL
    Jukkala, P
    Sjöman, P
    Weinreb, S
    2001 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2001, : 1959 - 1962
  • [37] Application of millimeter-wave photonics technology in passive millimeter-wave imaging
    Zhang, Yuedong
    Jiang, Yuesong
    Guo, Jingping
    He, Yuntao
    Wang, Haiyang
    INFRARED, MILLIMETER WAVE, AND TERAHERTZ TECHNOLOGIES, 2010, 7854
  • [38] Millimeter-wave amplifiers using a 0.8 μm Si/SiGe HBT technology
    Chaitier, S
    Sönmez, E
    Schumacher, H
    2006 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2006, : 277 - +
  • [39] Millimeter-wave wide-band amplifiers using multilayer MMIC technology
    Imaoka, T
    Banba, S
    Minakawa, A
    Imai, N
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1997, 45 (01) : 95 - 101
  • [40] Millimeter-Wave Power Amplifiers in 45nm CMOS SOI Technology
    Chen, Jing-Hwa
    Helmi, Sultan R.
    Mohammadi, Saeed
    2011 IEEE INTERNATIONAL SOI CONFERENCE, 2011,
12345