Formation of deep pn junctions by MeV Al- and B-ion implantations into 4H-SiC and reverse characteristics

被引：0
|
作者：
Miyamoto, N. [1 ]
Saitoh, A. [1 ]
Kimoto, T. [1 ]
Matsunami, H. [1 ]
Hishida, Y. [2 ]
Watanabe, M. [2 ]
机构：
[1] Dept. of Electron. Sci. and Eng., Kyoto University, Yoshidahonmachi, Sakyo, Kyoto, 606-8501, Japan
[2] Ion Eng. Res. Institute Corporation, Hirakata, Osaka, 573-0128, Japan
来源：
Materials Science Forum | 2000年 / 338卷
关键词：
Compendex;
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摘要：
Activation energy - Aluminum - Ion implantation - Semiconducting boron - Semiconductor doping - Semiconductor junctions - Silicon carbide - Substrates
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