Analytical model for reverse characteristics of 4H-SiC merged PN-Schottky (MPS) diodes

被引：0
|
作者：
Song Qing-Wen [1 ]
Zhang Yu-Ming [1 ]
Zhang Yi-Men [1 ]
Lue Hong-Liang [1 ]
Chen Feng-Ping [1 ]
Zheng Qing-Li [1 ]
机构：
[1] Xidian Univ, Key Lab Wide Band Gap Semicond Mat & Devices, Sch Microelect, Xian 710071, Peoples R China
来源：
CHINESE PHYSICS B | 2009年 / 18卷 / 12期
关键词：
4H-SiC; merged PN-Schottky; reverse characteristics; tunnelling current; JBS RECTIFIERS; LEAKAGE; DESIGN;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A new analytical model for reverse characteristics of 4H-SiC merged PN-Schottky diodes (MPS or JBS) is developed. To accurately calculate the reverse characteristics of the 4H-SiC MPS diode, the relationship between the electric field at the Schottky contact and the reverse bias is analytically established by solving the cylindrical Poisson equation after the channel has pinched off. The reverse current density calculated from the Wentzel-Kramers-Brillouin (WKB) theory is verified by comparing it with the experimental result, showing that they are in good agreement with each other. Moreover, the effects of P-region spacing (S) and P-junction depth (X-j) on the characteristics of 4H-SiC MPS are analysed, and are particularly useful for optimizing the design of the high voltage MPS diodes.
引用
收藏
页码：5474 / 5478
页数：5
相关论文
共 50 条
  • [1] Analytical model for reverse characteristics of 4H-SiC merged PN Schottky (MPS) diodes
    宋庆文
    张玉明
    张义门
    吕红亮
    陈丰平
    郑庆立
    Chinese Physics B, 2009, 18 (12) : 5474 - 5478
  • [2] Fabrication of 4H-SiC merged PN-Schottky diodes
    Zhang, Y.M., 2001, Science Press (22):
  • [3] 4.3 kV 4H-SiC merged PiN/Schottky diodes
    Wu, Jian
    Fursin, Leonid
    Li, Yuzhu
    Alexandrov, Petre
    Weiner, M.
    Zhao, J. H.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (07) : 987 - 991
  • [4] Analytical model for I-V characteristics of 4H-SiC Schottky barrier diodes
    Chang, Yuan-Cheng
    Zhang, Yi-Men
    Zhang, Yu-Ming
    Xi'an Dianzi Keji Daxue Xuebao/Journal of Xidian University, 2001, 28 (04): : 467 - 471
  • [5] Improvements in the reverse characteristics of 4H-SiC Schottky barrier diodes by hydrogen treatments
    Kim, DH
    Na, HJ
    Jung, SY
    Song, IB
    Um, MY
    Song, HK
    Jeong, JK
    Lee, JB
    Kim, HJ
    SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 1001 - 1004
  • [6] Influence of annealing on reverse current of 4H-SiC Schottky diodes
    Sochacki, M
    Szmidt, J
    Bakowski, M
    Werbowy, A
    DIAMOND AND RELATED MATERIALS, 2002, 11 (3-6) : 1263 - 1267
  • [7] Inhomogeneous electrical characteristics in 4H-SiC Schottky diodes
    Ewing, D. J.
    Wahab, Q.
    Ciechonski, R. R.
    Syvajarvi, M.
    Yakimova, R.
    Porter, L. M.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (12) : 1287 - 1291
  • [8] Modeling Framework to Compare High Voltage Vertical GaN PN and Merged PN-Schottky Diodes
    Atwimah, Samuel K.
    Nelson, Tolen
    Pandey, Prakash
    Fox, Aidan P.
    Georgiev, Daniel G.
    Jacobs, Alan G.
    Koehler, Andrew D.
    Hobart, Karl D.
    Anderson, Travis J.
    Khanna, Raghav
    2024 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC, 2024, : 2663 - 2669
  • [9] Properties of homoepitaxial 4H-SiC and characteristics of Ti/4H-SiC Schottky barrier diodes
    Chen, G.
    Li, Z. Y.
    Bai, S.
    Han, P.
    THIN FILM PHYSICS AND APPLICATIONS, SIXTH INTERNATIONAL CONFERENCE, 2008, 6984
  • [10] Effect of trench structure on reverse characteristics of 4H-SiC junction barrier Schottky diodes
    Konishi, Kumiko
    Kameshiro, Norifumi
    Yokoyama, Natsuki
    Shima, Akio
    Shimamoto, Yasuhiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (12)
12345