Deep Level investigation of pn-junctions formed by MeV aluminum and boron implantation into 4H-SiC

被引：3
|
作者：
Schöner, A
Miyamoto, N
Kimoto, T
Matsunami, H
机构：
[1] ACREO AB, SE-16440 Kista, Sweden
[2] Kyoto Univ, Dept Elect Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷
关键词：
carbon co-implantation; implantation induced defects; implanted pn-junction; isothermal capacitance transient spectroscopy; post implantation anneal;
D O I：
10.4028/www.scientific.net/MSF.353-356.451
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
ICTS measurements on aluminum, aluminum/carbon, boron? and boron/carbon implanted pn-diodes annealed at 1600 degreesC and 1800 degreesC for 30 min were performed to investigate doping related and implantation induced traps in the vicinity of the pn-junction. An Arrhenius plot analysis was used to determine the trap ionization energies. From this analysis the identified traps can be divided into two groups; one group can be related to the shallow dopants nitrogen and aluminum. The second group consists of deep centers, which can be identified as the implantation induced Z(1)- center and the boron related B-center, The concentration of the Z(1)-center was reduced by at least 1- 2 orders of magnitude in pn-diodes annealed at 1800 degreesC compared with pn-diodes annealed at 1600 degreesC.
引用
收藏
页码：451 / 454
页数：4
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