Microwave plasma etching system

被引：0
|
作者：
Kanai, Saburo [1 ]
Nojiri, Kazuo [1 ]
Nawata, Makoto [1 ]
机构：
[1] Hitachi Ltd
来源：
Hitachi Review | 1991年 / 40卷 / 06期
关键词：
4;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：383 / 388
相关论文
共 50 条
  • [41] ROLE OF SULFUR-ATOMS IN MICROWAVE PLASMA-ETCHING OF SILICON
    NINOMIYA, K
    SUZUKI, K
    NISHIMATSU, S
    OKADA, O
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (04) : 1459 - 1468
  • [42] Etching parylene-N using a remote oxygen microwave plasma
    Callahan, R
    Raupp, G
    Beaudoin, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (05): : 1870 - 1877
  • [43] Etching characteristics of crystal quartz by surface wave microwave induced plasma
    Bennett, Adam
    Yu, Nan
    Castelli, Marco
    Chen Guoda
    Fang Fengzhou
    AOPC 2020: OPTICS ULTRA PRECISION MANUFACTURING AND TESTING, 2020, 11568
  • [44] Diamond micropowder synthesis via graphite etching in a microwave hydrogen plasma
    Yao, Kaili
    Dai, Bing
    Zhu, Jiaqi
    Ralchenko, Victor
    Shu, Guoyang
    Zhao, Jiwen
    Wang, Peng
    Liu, Benjian
    Gao, Ge
    Sun, Mingqi
    Liu, Kang
    Lv, Zhijun
    Yang, Lei
    Han, Jiecai
    POWDER TECHNOLOGY, 2017, 322 : 124 - 130
  • [45] ETCHING OF GAAS AND INP USING A HYBRID MICROWAVE AND RADIOFREQUENCY SYSTEM
    PANG, SW
    LIU, Y
    SUNG, KT
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06): : 3530 - 3534
  • [46] Plasma properties of a negative ion plasma reactive ion etching system
    Keller, JH
    Kocon, WW
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (7B): : 4280 - 4282
  • [47] Plasma properties of a negative ion plasma reactive ion etching system
    Keller, John H.
    Kocon, W. Walter
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (7 B): : 4280 - 4282
  • [48] MICROWAVE ETCHING PROCESSES
    ASTELLBURT, PJ
    ROYAL, H
    HOLDITCH, R
    VACUUM, 1988, 38 (8-10) : 950 - 950
  • [49] MICROWAVE ETCHING DEVICE FOR REACTIVE ION ETCHING
    SCHMID, H
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1991, 139 : 408 - 411
  • [50] Control of silicon dioxide etching rate in hydrogen microwave plasma by addition of oxygen
    Yurov, V. Yu.
    Bolshakov, A. P.
    Fedorova, I. A.
    Popovich, A. F.
    Zyablyuk, K. N.
    Altakhov, A. S.
    Sovyk, D. N.
    Pivovarov, P. A.
    Volkov, P. V.
    Ralchenko, V. G.
    APPLIED SURFACE SCIENCE, 2023, 612
12345