BROAD LUMINESCENT BAND IN Zn-DOPED AlxGa1 - xAs GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION.

The authors have investigated by photoluminescence the low energy broad band in Zn-doped Al//xGa//1// minus //xAs grown by metalorganic chemical vapor deposition. The emission peak energy of the band shifts monotonically with temperature. The temperature variation of the half-width does not fit the configuration coordinate model. The emission peak intensity increases nearly linearly with the V/III ratio in the vapor phase during growth. It is suggested that a Zn//I//I//I V//I//I//I complex is responsible for the band, although the details of the recombination mechanism remain unknown.