Growth of CoSi2 on Si(001) by reactive deposition epitaxy

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作者：
Lim, C.W. [1 ]
Shin, C.-S. [1 ]
Gall, D. [1 ]
Zuo, J.M. [1 ]
Petrov, I. [1 ]
Greene, J.E. [1 ]
机构：
[1] Materials Science Department, Frederick Seitz Mat. Res. Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, IL 61801, United States
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| 1600年 / American Institute of Physics Inc.卷 / 97期
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Number:; DEFG02-91ER45439; Acronym:; USDOE; Sponsor: U.S. Department of Energy; -;
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