Reactive Deposition Epitaxy of CoSi2 Films on Clean and Oxygen-Adsorbed Si(001) Surfaces

被引：0
|
作者：
Hayashi, Yukihiro [1 ,2 ]
Sakai, Akira [1 ]
Ikeda, Hiroya [1 ,4 ]
Zaima, Shigeaki [3 ]
Yasuda, Yukio [1 ]
机构：
[1] Dept. of Crystalline Mat. Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
[2] Electronics Department, Nagoya Municipal Indust. Res. Inst., 3-4-41 Rokuban, Atsuta-ku, Nagoya 456-0058, Japan
[3] Ctr. Coop. Res. Adv. Sci./Technol., Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
[4] Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8011, Japan
来源：
| 1600年 / Japan Society of Applied Physics卷 / 42期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Reactive deposition epitaxy of CoSi2 films on clean and oxygen-adsorbed Si(001) surfaces
    Hayashi, Y
    Sakai, A
    Ikeda, H
    Zaima, S
    Yasuda, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (12): : 7482 - 7488
  • [2] Solid-phase epitaxial growth of CoSi2 on clean and oxygen-adsorbed Si(001) surfaces
    Hayashi, Y
    Yoshinaga, M
    Ikeda, H
    Zaima, S
    Yasuda, Y
    SURFACE SCIENCE, 1999, 438 (1-3) : 116 - 122
  • [3] Growth of CoSi2 on Si(001) by reactive deposition epitaxy
    Lim, C.W.
    Shin, C.-S.
    Gall, D.
    Zuo, J.M.
    Petrov, I.
    Greene, J.E.
    1600, American Institute of Physics Inc. (97):
  • [4] EPITAXIAL COSI2 FORMATION ON (001)SI BY REACTIVE DEPOSITION
    READER, AH
    DUCHATEAU, JPWB
    CROMBEEN, JE
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (07) : 1204 - 1207
  • [5] Epitaxial growth of CoSi2 on Si(001) by reactive deposition epitaxy:: Island growth and coalescence
    Lim, C. W.
    Petrov, I.
    Greene, J. E.
    THIN SOLID FILMS, 2006, 515 (04) : 1340 - 1348
  • [6] Growth of CoSi2 on Si(001) by reactive deposition epitaxy -: art. no. 044909
    Lim, CW
    Shin, CS
    Gall, D
    Zuo, JM
    Petrov, I
    Greene, JE
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (04)
  • [7] Growth mechanism of epitaxial CoSi2 on Si and reactive deposition epitaxy of double heteroepitaxial Si/CoSi2/Si
    Tsuji, Yoshiko
    Mizukami, Makoto
    Noda, Suguru
    THIN SOLID FILMS, 2008, 516 (12) : 3989 - 3995
  • [8] Application of a two-step growth to the formation of epitaxial CoSi2 films on Si(001) surfaces:: Comparative study using reactive deposition epitaxy
    Hayashi, Y
    Katoh, T
    Ikeda, H
    Sakai, A
    Zaima, S
    Yasuda, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (01): : 269 - 275
  • [9] Reactive deposition epitaxy of CoSi2 nanostructures on Si(001):: Nucleation and growth and evolution of dots during anneal
    Goldfarb, I
    Briggs, GAD
    PHYSICAL REVIEW B, 1999, 60 (07): : 4800 - 4809
  • [10] EPITAXY OF COSI2/SI(100) - FROM CO/TI/SI(100) TO REACTIVE DEPOSITION EPITAXY
    VANTOMME, A
    DEGROOTE, S
    DEKOSTER, J
    LANGOUCHE, G
    APPLIED SURFACE SCIENCE, 1995, 91 (1-4) : 24 - 29
12345