GROWTH OF GaAs ON PREFERENTIALLY ETCHED GaAs SURFACES BY MIGRATION-ENHANCED EPITAXY.

被引：0
|
作者：
Kawashima, Minoru [1 ]
Horikoshi, Yoshiji [1 ]
机构：
[1] NTT, Musashino, Jpn, NTT, Musashino, Jpn
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1988年 / 27卷 / 04期
关键词：
ADATOM MIGRATION - MIGRATION-ENHANCED EPITAXY - PREFERENTIAL GROWTH;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
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页码：483 / 486
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