IDENTIFICATION OF THE 'EL2 FAMILY' MIDGAP LEVELS IN GaAs.

被引：0

作者：

Ikoma, Toshiaki ^{[1
]}

Mochizuki, Yasunori ^{[1
]}

机构：

[1] Univ of Tokyo, Tokyo, Jpn, Univ of Tokyo, Tokyo, Jpn

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 1985年 / 24卷 / 12期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

SEMICONDUCTING GALLIUM ARSENIDE

引用

页码：935 / 937

共 50 条

[41] OPTICAL CHARACTERIZATION OF SEMIINSULATING GAAS - DETERMINATION OF THE FERMI ENERGY, THE CONCENTRATION OF THE MIDGAP EL2 LEVEL AND ITS OCCUPANCY
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