共 36 条
- [1] EVIDENCE FOR ASSOCIATED DEEP DONOR SHALLOW ACCEPTOR PAIR RECOMBINATION FOR THE EL2 EMISSION BAND IN GAAS PHYSICA B & C, 1983, 117 (MAR): : 173 - 175
- [2] EL2 induced enhancement of the donor acceptor pair luminescence in GaAs DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 1009 - 1014
- [3] DEEP-ACCEPTOR-MEDIATED PHOTOQUENCHING OF THE MIDGAP DONOR EL2 IN SEMIINSULATING GAAS PHYSICAL REVIEW B, 1995, 52 (03): : 1666 - 1673
- [4] A NEW EMISSION BAND RELATED TO EL2 IN GAAS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12): : L2122 - L2124
- [8] CONTOUR MAPS OF EL2 DEEP LEVEL IN LIQUID-ENCAPSULATED CZOCHRALSKI GaAs. Journal of Applied Physics, 1984, 55 (10): : 3588 - 3594
- [9] EVIDENCE FOR 2 ENERGY-LEVELS ASSOCIATED WITH EL2 TRAP IN GAAS APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 36 (04): : 213 - 216
- [10] MICROSCOPIC EXAMINATION OF THE DEEP DONOR EL2 IN UNDOPED SEMI-INSULATING GAAS INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (67): : 285 - 290