Inductively coupled plasma etching of III-V semiconductors in Cl2-based chemistries

被引:0
|
作者
Lee, J.W. [1 ]
Lambers, E.S. [1 ]
Abernathy, C.R. [1 ]
Pearton, S.J. [1 ]
Shul, R.J. [1 ]
Ren, F. [1 ]
Hobson, W.S. [1 ]
Constantine, C. [1 ]
机构
[1] Univ of Florida, Gainesville, United States
来源
关键词
The work at UF is partially supported by a DOD MURI monitored by AFOSR (H.C. DeLong); contract No. F49620-96-1-0026. Sandia National Laboratories is a multi-program laboratory operated by Martin Marietta for the US Department of Energy under Contract No. DE-AC04-94AL85000;
D O I
暂无
中图分类号
学科分类号
摘要
28
引用
收藏
页码:65 / 73
相关论文
共 50 条
  • [31] Plasma etching of III-V semiconductors in BCl3 chemistries .1. GaAs and related compounds
    Lee, JW
    Hong, J
    Lambers, ES
    Abernathy, CR
    Pearton, SJ
    Hobson, WS
    Ren, F
    PLASMA CHEMISTRY AND PLASMA PROCESSING, 1997, 17 (02) : 155 - 167
  • [32] PLASMA ETCHING APPLIED TO III-V COMPOUND SEMICONDUCTORS.
    Ibbotson, Dale E.
    Vide, les Couches Minces, 1983, 38 (218):
  • [33] IC1 plasma etching of III-V semiconductors
    Lee, J.W.
    Hong, J.
    Lambers, E.S.
    Pearton, S.J.
    Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1997, 15 (03):
  • [34] IC1 plasma etching of III-V semiconductors
    Lee, JW
    Hong, J
    Lambers, ES
    Pearton, SJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (03): : 652 - 656
  • [35] DOWNSTREAM PLASMA ACTIVATED ETCHING OF III-V COMPOUND SEMICONDUCTORS
    IYER, R
    LILE, DL
    ADVANCES IN MATERIALS, PROCESSING AND DEVICES IN III-V COMPOUND SEMICONDUCTORS, 1989, 144 : 519 - 524
  • [36] Wet etching of III-V semiconductors
    Gomes, WP
    PROCESSING AND PROPERTIES OF COMPOUND SEMICONDUCTORS, 2001, 73 : 215 - 295
  • [37] Comparison of Cl2 and F2 based chemistries for the inductively coupled plasma etching of NiMnSb thin films
    Hong, J
    Caballero, JA
    Lambers, ES
    Childress, JR
    Pearton, SJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (04): : 1326 - 1330
  • [38] Influence of substrate temperature on the etching of silver films using inductively coupled Cl2-based plasmas
    Park, SD
    Lee, YJ
    Kim, SG
    Choe, HH
    Hong, MP
    Yeom, GY
    SURFACE & COATINGS TECHNOLOGY, 2003, 171 (1-3): : 285 - 289
  • [39] Comparison of inductively coupled plasma chemistries for dry etching of group III-nitrides
    Cho, H
    Kim, JK
    Pearton, SJ
    JOURNAL OF CERAMIC PROCESSING RESEARCH, 2001, 2 (03): : 139 - 145
  • [40] Fast dry etching of doped GaN films in Cl2-based inductively coupled high density plasmas
    Cho, BC
    Im, YH
    Park, JS
    Jeong, T
    Hahn, YB
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2000, 37 (01) : 23 - 27