Inductively coupled plasma etching of III-V semiconductors in Cl2-based chemistries

被引：0
|
作者：
Lee, J.W. [1 ]
Lambers, E.S. [1 ]
Abernathy, C.R. [1 ]
Pearton, S.J. [1 ]
Shul, R.J. [1 ]
Ren, F. [1 ]
Hobson, W.S. [1 ]
Constantine, C. [1 ]
机构：
[1] Univ of Florida, Gainesville, United States
来源：
Materials Science in Semiconductor Processing | 1998年 / 1卷 / 01期
关键词：
The work at UF is partially supported by a DOD MURI monitored by AFOSR (H.C. DeLong); contract No. F49620-96-1-0026. Sandia National Laboratories is a multi-program laboratory operated by Martin Marietta for the US Department of Energy under Contract No. DE-AC04-94AL85000;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
28
引用
收藏
页码：65 / 73
相关论文
共 50 条
  • [1] Inductively coupled plasma etching of III-V semiconductors in Cl2-based chemistries
    Lee, JW
    Lambers, ES
    Abernathy, CR
    Pearton, SJ
    Shul, RJ
    Ren, F
    Hobson, WS
    Constantine, C
    SOLID-STATE ELECTRONICS, 1998, 42 (05) : A65 - A73
  • [2] Etching of Ga-based III-V semiconductors in inductively coupled Ar and CH4/H-2-based plasma chemistries
    Lee, JW
    Abernathy, CR
    Pearton, SJ
    Constantine, C
    Shul, RJ
    Hobson, WS
    PLASMA SOURCES SCIENCE & TECHNOLOGY, 1997, 6 (04): : 499 - 507
  • [3] Etching of Ga-based III-V semiconductors in inductively coupled Ar and CH4/H2-based plasma chemistries
    Lee, J.W.
    Abernathy, C.R.
    Pearton, S.J.
    Constantine, C.
    Shul, R.J.
    Hobson, W.S.
    Plasma Sources Science and Technology, 1997, 6 (04): : 499 - 507
  • [4] Cl2-based inductively coupled plasma etching of NiFe and related materials
    Jung, KB
    Lambers, ES
    Childress, JR
    Pearton, SJ
    Jenson, M
    Hurst, AT
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (11) : 4025 - 4028
  • [5] Planar inductively coupled BCl3 plasma etching of III-V semiconductors
    Lim, WT
    Baek, IK
    Lee, JW
    Jeon, MH
    Park, WW
    Cho, GS
    Pearton, SJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2004, 151 (05) : G343 - G346
  • [6] Cl2-based inductively coupled plasma etching of CoFeB, CoSm, CoZr and FeMn
    Jung, KB
    Cho, H
    Hahn, YB
    Hays, DC
    Feng, T
    Park, YD
    Childress, JR
    Pearton, SJ
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 60 (02): : 101 - 106
  • [7] Cl2-based inductively coupled plasma etching of InP using internal antenna
    Matsutani, A
    Ohtsuki, H
    Koyama, F
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (11): : 6837 - 6838
  • [8] Inductively coupled plasma etching of III-V semiconductors in BCl3-based chemistries -: II.: InP, InGaAs, InGaAsP, InAs and AlInAs
    Maeda, T
    Lee, JW
    Shul, RJ
    Han, J
    Hong, J
    Lambers, ES
    Pearton, SJ
    Abernathy, CR
    Hobson, WS
    APPLIED SURFACE SCIENCE, 1999, 143 (1-4) : 183 - 190
  • [9] Inductively coupled plasma etching of III-V semiconductors in BCl3-based chemistries I.: GaAs, GaN, GaP, GaSb and AlGaAs
    Maeda, T
    Lee, JW
    Shul, RJ
    Han, J
    Hong, J
    Lambers, ES
    Pearton, SJ
    Abernathy, CR
    Hobson, WS
    APPLIED SURFACE SCIENCE, 1999, 143 (1-4) : 174 - 182
  • [10] Cl2-based dry etching of GaN films under inductively coupled plasma conditions
    Im, YH
    Park, JS
    Hahn, YB
    Nahm, KS
    Lee, YS
    Cho, BC
    Lim, KY
    Lee, HJ
    Pearton, SJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (05): : 2169 - 2174
12345